? 2003 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 150 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 150 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c70a i dm t c = 25 c, pulse width limited by t jm 280 a i ar t c = 25 c70a e ar t c = 25 c30mj e as t c = 25 c 1.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c m d mounting torque 1. 13/10 nm/lb.in. weight to-247 ad 6 g to-268 4 g to-247 ad (ixfh) g = gate d = drain s = source tab = drain (tab) ds98583b(01/03) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 150 v v gs(th) v ds = v gs , i d = 4 ma 2.0 4.0 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss t j = 25 c25 a v gs = 0 v t j = 125 c 750 a r ds(on) v gs = 10 v, i d = 0.5 i d25 28 m ? pulse test, t 300 s, duty cycle d 2 % to-268 (ixft) case style (tab) g s hiperfet tm power mosfets ixfh 70n15 v dss = 150 v ixft 70n15 i d25 = 70 a r ds(on) = 28 m ? ? ? ? ? t rr 250ns n-channel enhancement mode avalanche rated, high dv/dt, low t rr features z international standard packages z low r ds (on) hdmos tm process z rugged polysilicon gate cell structure z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect z fast intrinsic rectifier advantages z easy to mount z space savings z high power density preliminary data sheet
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixfh 70n15 ixft 70n15 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 30 45 s c iss 3600 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1080 pf c rss 360 pf t d(on) 35 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 52 ns t d(off) r g = 2 ? (external) 70 ns t f 23 ns q g(on) 180 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 28 nc q gd 92 nc r thjc 0.42 k/w r thck (to-247) 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 70 a i sm repetitive; 280 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr 250 ns q rm i f = 25a,-di/dt = 100 a/ s, v r = 25 v 0.85 c i rm 8a dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-247 ad outline terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 to-268 outline terminals: 1 - gate 2 - drain 3 - source tab - drain min recommended footprint
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